Electronic Materials Letters , vol. 4, no. 2, pp.79-83, June, 2008

DOI :

The Effect of Doping on Metal-Induced Lateral Crystallization Rate

Chang-Woo Byun^*, Yong-Woo Lee, Jin-Hyun Park, Chul-Kyun Seok, Young-Soo Kim, and Seung-Ki Joo
Seoul National University

Abstract : The effect of dopants on the behavior of metal-induced lateral crystallization (MILC) growth was studied in this work. Two types of dopants (B₂H₆ and PH₃) were doped over 50Å Nickel films deposited on amorphous silicon. It was found that the MILC growth rate of The MILC growth rate of B₂H₆- and PH₃doped amorphous silicon (a-Si) thin film by ion mass doping (IMD) is slower than that of intrinsic a-Si. The decrease of growth rate was caused by the bonding of Si-P and the break down of the dangling bond between silicon and hydrogen during bonded ion mass doping. In addition, a phenomenon of growth stoppage at the boundary of the a-Si and ion mass doped range was observed. The rate of MILC growth decreased as dopant density increased.

Keyword : MILC, doping, dopant, IMD, ion mass doping