Electronic Materials Letters , vol. 4, no. 2, pp.67-70, June, 2008

DOI :

Structural and Optical Properties of InGaN/GaN Single Quantum Well Grown via MOCVD

Seung-Kyu Choi¹, Jae Min Jang¹, Woo-Gwang Jung^1,*, Jin-Yeol Kim¹, and Sung-Dai Kim^2
1Kookmin University, ²Seoul Sanggye Vocational School

Abstract : InGaN/GaN single quantum well (SQW) was grown on (0001) sapphire substrates via metal organic chemical vapor deposition (MOCVD). The InGaN interlayer was deposited at 750℃ using trimethylgallium, trimethylindium, and NH3 with flow rates of 17.7 μmol/min, 27.0 μmol/min, and 3.6 slm, respectively, for 60 seconds. The InGaN/GaN SQW was composed of a 2 μm thick GaN buffer layer, a 20 nm thick InGaN interlayer, and a 150 nm thick GaN capping layer. Auger electron spectroscopy (AES) revealed the composition of the InGaN interlayer to be In_0.1Ga_0.9N. The room temperature photoluminescence (RT-PL) spectrum showed peaks for a GaN buffer layer and an In_0.1Ga_0.9N interlayer at 362.2 nm (3.41 eV) and 446.6 nm (2.7 eV), respectively. The composition of the InGaN interlayer estimated from the PL peak position agreed well with the value determined by AES.

Keyword : indium gallium nitride (InGaN), single quantum well, metal organic chemical vapor deposition (MOCVD), Auger electron spectroscopy (AES), photoluminescence (PL)